document number: 83549 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 08-may-08 301 optocoupler, phototransistor output, with base connection in soic-8 package, 110 c rated il1205at/1206at/1207at/1208at vishay semiconductors description the 110 c il1205at/1206at/ 1207at/1208at are optically coupled pairs with a gallium arsenide infrared led and a silicon npn phototransistor. si gnal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. this family comes in a standard soic-8 small outline package for surface mounting which makes them ideally suited for high density applic ation with limit ed space. in addition to eliminating through-hole requirements, this package conforms to stan dards for surface mounted devices. a specified minimum and maximum ctr allows a narrow tolerance in the electrical design of the adjacent circuits. the high bv ceo of 70 v gives a higher safety margin compared to the industry standard 30 v. features ? operating temperature from - 55 c to + 110 c ? high bv ceo , 70 v ? isolation test voltage, 4000 v rms ? industry standard soic-8 surface mountable package ? compatible with dual wave, vapor phase and ir reflow soldering ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ac adapters ?plcs ? switch mode power supplies ? dc/dc converters ? microprocessor i/o interfaces ? general impedance matching circuits agency approvals ? ul1577 - file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-5 available with option 1 i179002 1 2 3 4 a k n c n c 8 7 6 5 n c b c e order information part remarks il1205at ctr 40 to 80 %, soic-8 il1206at ctr 63 to 125 %, soic-8 IL1207AT ctr 100 to 200 %, soic-8 il1208at ctr 160 to 320 %, soic-8 absolute maximum ratings (1) parameter test condition symbol value unit input continuous forward current i f 60 ma peak reverse voltage v r 6.0 v power dissipation p diss 90 mw derate linearly from 25 c 0.9 mw/c output collector emitter voltage v ce 70 v collector current i c 50 ma t < 1.0 ms i c 100 ma power dissipation p diss 150 mw derate linearly from 25 c 1.5 mw/c
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83549 302 rev. 1.7, 08-may-08 il1205at/1206at/1207at/1208at vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package, 110 c rated notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (sop/soic). fig. 1 - input power dissipation (led) vs. ambient temperatur e fig. 2 - output power dissipation vs. ambient temperature note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. coupler isolation test voltage v iso 4000 v rms operating temperature t amb - 55 to + 110 c total package dissipation (led and detector) p tot 240 mw storage temperature t stg - 55 to + 150 c soldering temperature (2) max. 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c derate linearly from 25 c 2.4 mw/c absolute maximum ratings (1) parameter test condition symbol value unit 010 203040506070 8 0 90 100 110 120 0 10 20 30 40 50 60 70 8 0 90 100 t am b (c) led po w er p diss (m w ) 0 10 20 30 40 50 60 70 8 0 90 100 110 120 0 10 20 30 40 50 60 70 8 0 90 100 t am b (c) o u tp u t po w er p diss (m w ) 110 120 130 140 150 160 electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.3 1.5 v reverse current v r = 6 v i r 0.1 100 a capacitance v r = 0 v c i 13 pf output collector emitter leakage current v ce = 10 v i ceo 5.0 50 na collector emitter breakdown voltage i c = 100 a bv ceo 70 v emitter collector breakdown voltage i e = 100 a bv eco 7.0 10 v collector base breakdown current bv cbo 70 v saturation voltage, collector emitter i c = 2 ma, i f = 10 ma v cesat 0.4 v coupler dc current transfer ratio i f = 10 ma, v ce = 5.0 v il1205at ctr 40 80 % il1206at ctr 63 125 % IL1207AT ctr 100 200 % il1208at ctr 100 320 % i f = 1.0 ma, v ce = 5.0 v il1205at ctr 13 25 % il1206at ctr 22 40 % IL1207AT ctr 34 60 % il1208at ctr 56 95 % capacitance (input to output) c io 0.5 pf
document number: 83549 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 08-may-08 303 il1205at/1206at/1207at/1208at optocoupler, phototransistor output, with base connec tion in soic-8 package, 110 c rated vishay semiconductors fig. 3 switching test circuit note as per iec 60747-5-2, 7.4.3.8.1, this optoc oupler is suitable for ?safe electrical insulation? only within the safety ratings. compliance with the safety ratings shall be ensured by means of protective circuits. switching characteristics parameter test condition symbol min. typ. max. unit turn-on time i c = 2 ma, r l = 100 , v cc = 10 v t on 3.0 s turn-off time i c = 2 ma, r l = 100 , v cc = 10 v t off 3.0 s i205at_11 v out v cc = 5 v r l inp u t t off t r 10 % 50 % 90 % t s t pdoff t pdon t on t r t d o u tp u t inp u t 10 % 50 % 90 % safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 55/110/21 pollution degree (din vde 0109) 2.0 comparative tracking index per din iec 112/vde 0303 part 1, group iiia per din vde 6110 175 399 cti 175 399 v iotm v iotm 6000 v v iorm v iorm 560 v resistance (input to output) r io 10 12 p si 350 mw i si 150 ma t si 165 c creepage distance 4.0 mm clearance distance 4.0 mm
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83549 304 rev. 1.7, 08-may-08 il1205at/1206at/1207at/1208at vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package, 110 c rated typical characteristics t amb = 25 c, unless otherwise specified fig. 4 - diode forward voltage v f vs. forward current fig. 5 - i c (unsaturated) vs. v ce fig. 6 - collector to emitter current vs. ambient temperature fig. 7 - i c (saturated) vs. v ce fig. 8 - ctr normalized to i f = 10 ma vs. ambient temperature, (saturated, v ce = 0.4 v) fig. 9 - ctr normalized to i f = 10 ma vs. ambient temperature, (non-saturated, v ce = 5 v) 0.1 1.0 10.0 100.0 i f (ma) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 for w ard v oltage v f ( v ) - 55 c 0 c + 25 c + 50 c + 110 c 0 5 10 15 20 25 30 35 40 45 50 01234567 8 910 v ce ( v ) collector c u rrent (ma) i f = 5 ma i f = 10 ma i f = 15 ma i f = 20 ma i f = 30 ma 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 collector to emitter leakage c u rrent i ce0 (na) 40 v 24 v 12 v - 55 - 40 - 25 - 10 20 35 50 65 8 0 95 110 125 t am b (c) 5 0 5 10 15 20 25 30 0.0 0.1 0.2 0.3 0.4 0.5 v ce ( v ) collector c u rrent (ma) i f = 1 ma i f = 2 ma i f = 5 ma i f = 10 ma i f = 25 ma 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 - 55 - 40 - 25 - 10 20 35 50 65 8 0 95 110 125 t am b (c) n ormalized ctr 5 n ormalized to i = 10 ma t am b = 25 c f i f = 5 ma i f = 10 ma i f = 1 ma 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized ctr - 55 - 40 - 25 - 10 20 35 50 65 80 95 110 125 t amb (c) 5 normalized to i = 10 ma t amb = 25 c f i f = 1 ma i f = 5 ma i f = 10 ma
document number: 83549 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 08-may-08 305 il1205at/1206at/1207at/1208at optocoupler, phototransistor output, with base connec tion in soic-8 package, 110 c rated vishay semiconductors fig. 10 - ctr vs. i f , (v ce = 5 v, t amb = 25 c) (not normalised) fig. 11 - ctr vs. i f , (v ce = 5 v, t amb = 25 c) normal is ed t o i f = 10 ma, t amb = 25 c fig. 12 - ctr vs. i f saturated, (v ce = 0.4 v, t amb = 25 c) fig. 13 - ctr vs. i f saturated, normalised to i f = 10 ma, t amb = 25 c fig. 14 - normalized h fe vs. base current and t amb (non-saturated condition) fig. 15 - normalized h fe vs. base current and t amb (saturated condition) 0 50 100 150 200 250 300 0.1 1.0 10.0 i f (ma) ctr ( % ) il120 8 il1207 il1206 il1205 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.1 1.0 10.0 100.0 i f (ma) ctr il120 8 il1207 il1206 il1205 0 50 100 150 200 250 0.1 1.0 10.0 100.0 i f (ma) ctr ( % ) il120 8 il1207 il1206 il1205 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 0.1 1.0 10.0 100.0 i f (ma) ctr il120 8 il1207 il1206 il1205 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 0.01 0.1 1 10 100 base c u rrent ( a) n ormalized h fe + 25 c 0 c + 50 c + 110 c - 55 c v ce = 5 v 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.01 0.1 1 10 100 base c u rrent ( a) n ormalized h fe + 110 c + 50 c 0 c + 25 c - 55 c v ce = 0.4 v
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83549 306 rev. 1.7, 08-may-08 il1205at/1206at/1207at/1208at vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package, 110 c rated fig. 16 - collector base photocurrent vs. i f fig. 17 - cut-off-frequency (- 3 db) vs. collector current fig. 18 - switching time t on , t off vs. load resistance fig. 19 - switching time t on , t off vs. load resistance (100 to 5000 ) fig. 20 - switching time vs. i f fig. 21 - switching time vs. rbe, i f = 10 ma 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 if (ma) collector-base-photocurrent i bcp (a) - 55 c 0 c + 25 c + 50 c + 110 c 1 10 100 1000 0.1 1 10 100 i c (ma) c u t-off-fre qu ency fctr (khz) il1207, il120 8 0 c + 25 c + 50 c v ce = 5 v , t am b = 25 c 1 10 100 1000 0 1 10 100 load resistance (k w ) t on , t off ( s) t off t on 1 10 100 0110 load resistance (k w ) t on , t off ( s) t off t on 192 8 1 i f (ma) 0 5 10 15 20 s w itching time ( s) 0 2 4 6 8 10 12 14 16 t on t off rbe = 500 k, v ce = 5 v t am b = + 25 c 0 5 10 15 20 25 30 10 100 1000 10000 t off t on rbe (k w ) s w itching time ( s)
document number: 83549 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 08-may-08 307 il1205at/1206at/1207at/1208at optocoupler, phototransistor output, with base connec tion in soic-8 package, 110 c rated vishay semiconductors package dimensions in inches (millimeters) i17 8 003 40 7 pin one id 5 max. iso method a 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) r 0.010 (0.13) 0.050 (1.27) 0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.00 8 (0.20) lead coplanarity 0.0015 (0.04) max. 0.00 8 (0.20) 0.120 0.005 (3.05 0.13) c l r 0.010 (0.25) max. 0.021 (0.53) 0.154 0.005 (3.91 0.13) 0.015 0.002 (0.3 8 0.05) 0.192 0.005 (4. 88 0.13) 0.020 0.004 (0.51 0.10) 2 places 0.05 8 0.005 (1.49 0.13) 0.125 0.005 (3.1 8 0.13)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83549 308 rev. 1.7, 08-may-08 il1205at/1206at/1207at/1208at vishay semiconductors optocoupler, phototransistor output, with base connection in soic-8 package, 110 c rated ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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